4GB DDR3 1600MHz SODIMM 2RANK 4GB with 256MX8 CL11
Overview
The TS512MSK64V6N is a 512M x 64bits DDR3-1600 2Rank SO-DIMM. The TS512MSK64V6N consists of 16pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS512MSK64V6N is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets.
4GB DDR3 1600MHz SODIMM 2RANK 4GB with 256MX8 CL11
Manufacturer Part Number
TS512MSK64V6N
Product Type
RAM Module
Memory Voltage
1.50 V
Memory Technology
DDR3 SDRAM
CAS Latency
CL11
Memory Size
4 GB
Form Factor
SoDIMM
Memory Speed
1600 MHz
Error Checking
Non-ECC
Number of Pins
204-pin
Signal Processing
Unbuffered
Country of Origin
Taiwan
Width
1.2"
Length
2.7"
Number of Modules
1 x 4GB
Thickness
39.4 mil
WARNING: Products with exposed solder can expose you to lead and lead compounds, chemicals known to the State of California to cause cancer, birth defects, or other reproductive harm. Always wash your hands after handling and avoid inhalation of fumes if heating the solder. For more information go to www.P65Warnings.ca.gov.
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